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| Photo transistor ST-1KLA DIMENSION The ST-1KLA is a high-sensiivity silicon phototransistor mounted in durable, hermetically sealed TO-18 metal can which provide years of reliable performance, even under demanding conditions such as use outdoors. FEATURES * Durable * High reliability in demending environments * Two leads (Unit : mm) APPLICATIONS * Smoke detector * Infrared sensors * Optical switches * Optical detectors MAXIMUM RATINGS Parameter C-E Voltage E-C Voltage Collector current Collector power dissipation Operating Temperature Storage Temperature Soldering temperature *1 (Ta=25C) Symbol VCEO VECO IC Pc Topr Tstg Tsol Rating 40 4 50 150 -35~+125 -50~+150 260 Unit V V mA mW C C C Notes : *1. For MAX.5 seconds at the position of 2mm from the package ELECTRO-OPTICAL CHARACTERISTICS Parameter Collector dark current Light current C-E Saturation voltage Switching speeds Spectral sensitivity Peak Wavelength Half angle Rise time Fall time Symbol ICEO IL VCE(sat) tr tf p Conditions VCEO=10V VCE=10V,200lx Ic=5mA, 2000lx (Ta=25C, unless otherwise noted) Min Typ Max Unit 1 1.5 6.0 0.2 8 10 500~1050 880 15 200 16 0.4 nA mA V ns ns nm nm deg. Vcc=10V,Ic=mA, RL=100 Notes : *2. Irradiance by CIE standard light source A (2850K tungsten lamp) 1/2 Photo transistor ST-1KLA Collector Current Vs. C-E Voltage () Collector current(I C 1) 8 L=300lx L=400lx Ta=25 Collector Dark Current Vs. Ambient Temperature Collector dark current(ICEO ) 10 2 6 4 2 0 L=200lx 10 1 100 L=100lx 10 -1 0 2 4 6 8 (V) 0 20 40 60 80 100 120 () Ambient temperature(Ta) Collector power dissipatoin Vs. Ambient Temperature Collector power dissipation(P C ) () Relative Sensitivity Vs. Wavelength (%) Spectral Sensitivity 100 80 60 40 20 0 400 500 600 700 800 900 1000 1100() Wavelength( ) 200 150 100 50 0 0 30 60 90 120 150 () Ambient temperature(Ta) Switching time Vs. Load resistance () Radiant Pattern Angle(deg.) Response time tr, tf 10 3 0 +4 +20 0 -20 -4 0 -6 0 + 60 10 2 50 -80 -100 +1 00 10 1 +80 0 100 50 50 100 10 0 10 -1 10 0 10 1 10 2 Road Resistance(R L ) ( ) Relative intensity(%) Switching time measuremenst circuit IFP IC RL VCC VOUT Input Output tr 90% 10% tf 2/2 |
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